Characterization of nanocrystalline silicon films

Hongyi Lin; Jinhua Liu; Bo Liao; Daoming Yang; Yue Wang

doi:10.1117/12.424420

6 April 2001 Characterization of nanocrystalline silicon films

Hongyi Lin, Jinhua Liu, Bo Liao, Daoming Yang, Yue Wang

Proceedings Volume 4234, Smart Materials; (2001) https://doi.org/10.1117/12.424420
Event: Smart Materials and MEMS, 2000, Melbourne, Australia

Abstract

The hydrogenated nanocrystalline silicon (nc-Si:H) films have attracted an extensive attention for their novel structure and peculiar properties. The nc-Si:H films are prepared by the high purity hydrogen highly diluted silane as the reactive gases which are activated at r.f. and d.c. double power sources, in a conventional plasma enhanced chemical vapor deposition (PECVD) system. The film samples have been studied by high-resolution electron microscopy (HREM), Raman scattering spectroscopy. Based on the dynamics analysis of the fabrication process of the nc-Si:H films, a fractal growth model which is called diffusion and reaction limited aggregation (DRLA) model was proposed. It is shown that the results of the computer simulation agree with the experimental results.

Citation Download Citation

Hongyi Lin, Jinhua Liu, Bo Liao, Daoming Yang, and Yue Wang "Characterization of nanocrystalline silicon films", Proc. SPIE 4234, Smart Materials, (6 April 2001); https://doi.org/10.1117/12.424420

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