Indium segregation in InGaN/GaN quantum well structures

Chih Chung Yang; Shih-Wei Feng; Yen-Sheng Lin; Yung-Chen Cheng; Chi-Chih Liao; Chin-Yi Tsai; Kung-Jeng Ma; Jen-Inn Chyi

doi:10.1117/12.424737

23 April 2001 Indium segregation in InGaN/GaN quantum well structures

Chih Chung Yang, Shih-Wei Feng, Yen-Sheng Lin, Yung-Chen Cheng, Chi-Chih Liao, Chin-Yi Tsai, Kung-Jeng Ma, Jen-Inn Chyi

Proceedings Volume 4280, Ultrafast Phenomena in Semiconductors V; (2001) https://doi.org/10.1117/12.424737
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Indium segregation in InGaN is a crucial phenomenon controlling the optical characteristics of such a compound. Its formation is a natural process due to the large lattice mismatch between InN and GaN. In InGaN, indium compositional fluctuations and phase separated InN clusters can be observed, particularly when the nominal indium content is high. In this paper, we report the results of material characterization, including X-ray diffraction, high- resolution transmission electron microscopy, atomic force microscopy, etc., and optical studies, including photo- luminescence and stimulated emission.

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Chih Chung Yang, Shih-Wei Feng, Yen-Sheng Lin, Yung-Chen Cheng, Chi-Chih Liao, Chin-Yi Tsai, Kung-Jeng Ma, and Jen-Inn Chyi "Indium segregation in InGaN/GaN quantum well structures", Proc. SPIE 4280, Ultrafast Phenomena in Semiconductors V, (23 April 2001); https://doi.org/10.1117/12.424737

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