Nonlinear dynamics in a graded quantum well placed in a GaAlAs p-n junction

Naci Balkan; Huseyin Sari; Andreas Schroeder; Yuksel Ergun; Ismail Sokmen; John Stuart Roberts

doi:10.1117/12.432622

9 July 2001 Nonlinear dynamics in a graded quantum well placed in a GaAlAs p-n junction

Naci Balkan, Huseyin Sari, Andreas Schroeder, Yuksel Ergun, Ismail Sokmen, John Stuart Roberts

Proceedings Volume 4283, Physics and Simulation of Optoelectronic Devices IX; (2001) https://doi.org/10.1117/12.432622
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Theoretical and experimental results concerning the study of a novel wavelength converter amplifier, which can be tuned, with the amplification of an external voltage are presented. The device consists of a Ga_1-xAl_xAs graded quantum well, placed on the n-side of the depletion region of a Ga_1-xAl_xAs p-n junction. As a result of the competition between the built-in field and the grading, in the absence of an external bias, the quantum well acts as an isolated well. Forward biasing of the junction reduces the built-in field; thus the field associated with the grading becomes effective. The tuning of the operation wavelength is based on the anti-Quantum Confined Stark Effect and achieved during the forward biasing. In this study we present the numerical results based on a 2D modeling of the device where exciton binding energy, absorption co-efficient and transition energy are obtained as a function of applied field. Experimental results show a tuning range of around 40nm.

Citation Download Citation

Naci Balkan, Huseyin Sari, Andreas Schroeder, Yuksel Ergun, Ismail Sokmen, and John Stuart Roberts "Nonlinear dynamics in a graded quantum well placed in a GaAlAs p-n junction", Proc. SPIE 4283, Physics and Simulation of Optoelectronic Devices IX, (9 July 2001); https://doi.org/10.1117/12.432622

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