Paper
6 June 2001 High-power laser bars for 70-W cw (808 nm): a comparison between SQW and DQW
Martin Behringer, Gerhard Herrmann, Stefan Groetsch, W. Teich, Johann Luft, Bruno D. Acklin, Lutz Korte, Christian Hanke, Marcel Marchiano
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Abstract
We have investigated the degradation behavior of high power diode-laser bars at 80 nm with single quantum and double quantum well structures in continuous wave operation. The 1 cm bars have a fill factor of 50%. Laser diodes with different resonator lengths from 300 micrometers to 2000 micrometers have been investigated. Different bars were mounted on actively cooled submounts and operated at comparable current densities and heat load.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Martin Behringer, Gerhard Herrmann, Stefan Groetsch, W. Teich, Johann Luft, Bruno D. Acklin, Lutz Korte, Christian Hanke, and Marcel Marchiano "High-power laser bars for 70-W cw (808 nm): a comparison between SQW and DQW", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429787
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Cited by 2 scholarly publications.
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KEYWORDS
Resonators

Quantum wells

High power lasers

Mirrors

Continuous wave operation

Interfaces

Laser resonators

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