High reliability and facet temperature reduction in high-power 0.8-um Al-free active-region diode lasers

Toshiro Hayakawa

doi:10.1117/12.429789

6 June 2001 High reliability and facet temperature reduction in high-power 0.8-μm Al-free active-region diode lasers

Toshiro Hayakawa

Proceedings Volume 4287, In-Plane Semiconductor Lasers V; (2001) https://doi.org/10.1117/12.429789
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

Al-free active region broad stripe lasers, consisting of an InGaAsP quantum well, InGaP waveguide layers and AlGaAs clad layers, prepared by low-pressure MOVPE have shown excellent long-term reliability and relatively low temperature sensitivity for the wavelength range of 795 - 815 nm, which is suitable for solid-state laser excitation. High bandgap cladding is essential for reducing the electron leakage from the active region. We have measured the facet temperature and its distribution using modulation reflectance method.

Citation Download Citation

Toshiro Hayakawa "High reliability and facet temperature reduction in high-power 0.8-μm Al-free active-region diode lasers", Proc. SPIE 4287, In-Plane Semiconductor Lasers V, (6 June 2001); https://doi.org/10.1117/12.429789

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