Paper
11 July 2001 Domain switching criteria for piezoelectric materials
Chin-Teh Sun, Ajit Achuthan
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Abstract
Experimental results reported by many researchers showed that the coercive electric field for ferroelectric switching depends on mechanical stresses present in the material. Similarly, the coercive stress for ferroelastic switching depends on the electric field. To model these dependences, several domain switching criteria based on different considerations have been proposed in earlier studies. In this paper, these domain switching criteria are briefly reviewed and the predictions based on these domain switching criteria are compared with the available experimental data for 180 degree(s) domain switching in PZT. It is found that the predictions do not match the experimental results. Motivated by this observation, a new domain switching criterion based on internal energy density is proposed. This new criterion is found to yield very good predictions compared with the existing experimental results for 180 degree(s) domain switching in PZT. To verify the new domain switching criterion for 90 degree(s) switching, experiments were conducted using PZT-5H. The new experimental result indicates that the new domain switching criterion gives a much better prediction than other existing criteria.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chin-Teh Sun and Ajit Achuthan "Domain switching criteria for piezoelectric materials", Proc. SPIE 4333, Smart Structures and Materials 2001: Active Materials: Behavior and Mechanics, (11 July 2001); https://doi.org/10.1117/12.432762
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Cited by 17 scholarly publications.
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KEYWORDS
Switching

Polarization

Ferroelectric materials

Crystals

Sun

Switches

Silicon

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