Paper
28 November 2000 128 X 128 IR FPA based on GaAs/AlGaAs MQW
Michail A. Dem'yanenko, I. V. Marchishin, Anatoly G. Klimenko, A. I. Kozlov, Victor N. Ovsyuk, Anna P. Savchenko, Aleksandr I. Toropov, Valerii V. Shashkin
Author Affiliations +
Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407743
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation
Abstract
In this paper the experimental results on designing of 128X128 FPA for far IR spectrum range are presented. The module is a hybrid assembly of the photodetectors array based on GaAs/AlGaAs multiquantum wells and silicon multiplexer. The noise equivalent difference of temperature of the photodetector module NEDT=0.067 K at T=65 K.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michail A. Dem'yanenko, I. V. Marchishin, Anatoly G. Klimenko, A. I. Kozlov, Victor N. Ovsyuk, Anna P. Savchenko, Aleksandr I. Toropov, and Valerii V. Shashkin "128 X 128 IR FPA based on GaAs/AlGaAs MQW", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407743
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KEYWORDS
Staring arrays

Photodetectors

Multiplexers

Quantum wells

Gallium arsenide

Silicon

Manufacturing

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