Photoelectric properties of polycrystal Pb1-x-yGexSnyTe:In thin films grown with modified hot wall method

Alexander I. Dirochka; Vladimir F. Chishko; Igor L. Kasatkin; Vyacheslav N. Vasil'kov; Alexandre G. Moisseenko

doi:10.1117/12.407730

28 November 2000 Photoelectric properties of polycrystal Pb_1-x-yGe_xSn_yTe:In thin films grown with modified hot wall method

Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, Alexandre G. Moisseenko

Author Affiliations +

Proceedings Volume 4340, 16th International Conference on Photoelectronics and Night Vision Devices; (2000) https://doi.org/10.1117/12.407730
Event: XVI International Conference on Photoelectronics and Night Vision Devices, 2000, Moscow, Russian Federation

Abstract

Pb_1-x-yGe_xSn_yTe:In thin films were made using hot wall modified method is used for making of. The composition of grown films approximately corresponds to the initial composition of the polycrystalline charge when using this method. Maximum observed concentration deviation (in comparison to charge) of different components in resulting films was: (Delta) n_Pb less than or equal to 6%, (Delta)n_Ge less than or equal to 23%, (Delta)n_Sn less than or equal to 11%. Crystalline perfection of films depends on a substrate type but their composition does not depend on it. Unlike BaF2 substrates, films grown on Si + SiO₂ substrates were polycrystalline. Alternating current measurements (responsivity and current dependence on modulation frequency) showed that behavior of polycrytalline films was the same as of monocrystalline films (on BaF₂). However direct current measurements (current-voltage and temperature dependence of resistance) showed results, that differ from those for monocrystalline films. The model, based on assumption about existence of traps at the polycrystal grain boundaries was proposed to explain obtained results. Concentration of electrons, captured on these traps was seemingly dependent on the background flux. This model was used to explain difference between monocrystalline and polycrystalline Pb_1-x-yGe_xSb_yTe:In thin films.

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Alexander I. Dirochka, Vladimir F. Chishko, Igor L. Kasatkin, Vyacheslav N. Vasil'kov, and Alexandre G. Moisseenko "Photoelectric properties of polycrystal Pb_1-x-yGe_xSn_yTe:In thin films grown with modified hot wall method", Proc. SPIE 4340, 16th International Conference on Photoelectronics and Night Vision Devices, (28 November 2000); https://doi.org/10.1117/12.407730

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KEYWORDS

Thin films

Silicon

Resistance

Electrons

Modulation

Temperature metrology

Solids

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