Mathematical modeling of field electron emission from semiconductor with electrical centroid rule

Valery P. Denissov; Marina I. Varajun

doi:10.1117/12.417676

1 February 2001 Mathematical modeling of field electron emission from semiconductor with electrical centroid rule

Valery P. Denissov, Marina I. Varajun

Proceedings Volume 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2001) https://doi.org/10.1117/12.417676
Event: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 2000, St. Petersburg, Russian Federation

Abstract

Development of vacuum microelectronics, polarized electron sources, and flat displays renewed interest in field electron emission from semiconductors. In the report some results of mathematical modeling of this phenomenon are presented with electron escape probability calculated with 'electrical centroid rule' for 2D layer at a surface. Advantages of such approach compared to the conventional image force account are discussed for flat and nano-tip emitters. The current-voltage plots are constructed for some promising emitters.

Citation Download Citation

Valery P. Denissov and Marina I. Varajun "Mathematical modeling of field electron emission from semiconductor with electrical centroid rule", Proc. SPIE 4348, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (1 February 2001); https://doi.org/10.1117/12.417676

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