Application of e-beam chemically amplified resist to devices below 0.18-um node

Chan-Uk Jeon; Chang-Hwan Kim; Seong-Woon Choi; Woo-Sung Han; Jung-Min Sohn

doi:10.1117/12.425090

9 April 2001 Application of e-beam chemically amplified resist to devices below 0.18-μm node

Chan-Uk Jeon, Chang-Hwan Kim, Seong-Woon Choi, Woo-Sung Han, Jung-Min Sohn

Proceedings Volume 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2001) https://doi.org/10.1117/12.425090
Event: 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, 2000, Munich, Germany

Abstract

We have experimentally studied a possibility of chemically amplified (CA) resist process for mask production in various aspects. The pattern fidelity of CA resist for small patterns such as serifs and scattering bars was compared to that of ZEP7000, the most frequently used e-beam resist. We elucidated the design of delay effect in vacuum during a long e-beam writing time. It proved that critical-dimension (CD) change occurred with an acetal type resist compared to an acrylate type resist. We have achieved CD uniformity of < 10 nm in 3(sigma) within 135 X 135 mm² field showing a high possibility for CAR process to be applied to the mask production for device generations beyond 180 nm.

Citation Download Citation

Chan-Uk Jeon, Chang-Hwan Kim, Seong-Woon Choi, Woo-Sung Han, and Jung-Min Sohn "Application of e-beam chemically amplified resist to devices below 0.18-μm node", Proc. SPIE 4349, 17th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (9 April 2001); https://doi.org/10.1117/12.425090

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