In-situ kinetics study of gas phase formation in the system Ga/In-AsCl3-HCl-H2 by UV spectroscopy

Valery A. Voronin; Sergey K. Guba; Marina A. Litvin; A. Yu. Kulikov

doi:10.1117/12.417800

22 February 2001 In-situ kinetics study of gas phase formation in the system Ga/In-AsCl₃-HCl-H₂ by UV spectroscopy

Valery A. Voronin, Sergey K. Guba, Marina A. Litvin, A. Yu. Kulikov

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417800
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

In this paper we present the experimental results on kinetic research of a gas phase formation in the system Ga/In-AsCl₃-HCl-H₂ which we use for the preparation of high quality InP/InGaAs multilayers with thickness less than 100 nm by I -VPE method. This experimental data are received in-situ by UV-spectroscopy when combined In-Ga source is used. The analysis of kinetic processes in a zone of the source is necessary to understand the influence of such parameters as temperature, gas carrier flow rates, In/Ga source surface area, input concentrations of chloride containing components on composition of gas phase. It is shown that the going completeness of the heterogeneous reactions strongly depends on the Ga-In source surface area and input flow rate under other equal parameters. Besides analyzing of the gas phase composition it is necessary to take into account GaCl _(liq.) equals GaCl _(g) equilibrium at the temperature below 800 K.

Citation Download Citation

Valery A. Voronin, Sergey K. Guba, Marina A. Litvin, and A. Yu. Kulikov "In-situ kinetics study of gas phase formation in the system Ga/In-AsCl₃-HCl-H₂ by UV spectroscopy", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417800

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