Epitaxial InAs detectors optically immersed to GaAs microlenses

Janusz Kaniewski; Zbigniew Orman; Jozef Piotrowski; M. Sioma; L. Ornoch; Mariusz Romanis

doi:10.1117/12.445349

10 October 2001 Epitaxial InAs detectors optically immersed to GaAs microlenses

Janusz Kaniewski, Zbigniew Orman, Jozef Piotrowski, M. Sioma, L. Ornoch, Mariusz Romanis

Proceedings Volume 4369, Infrared Technology and Applications XXVII; (2001) https://doi.org/10.1117/12.445349
Event: Aerospace/Defense Sensing, Simulation, and Controls, 2001, Orlando, FL, United States

Abstract

InAs-based alloys has been the subject of intense studies over the past few years, due to its importance as a material for photovoltaic detectors that can be tuned to optimum performance at any wavelength within 1 - 3.6 μm spectral range. We report here new results concerning electrical and photoelectrical characteristics of epitaxial InAs photovoltaic detectors optically immersed to GaAs microlenses and operating at near room temperatures. The devices are based on epitaxial heterostructures grown directly on thick GaAs substrates by molecular beam epitaxy. The performance of the detectors has been significantly improved by the use of multilayer heterostructures with optimized doping and band gap profiles, improved crystalline perfection of the heterostructure, improved processing resulting in reduction of parasitic series resistance and increase of shunt resistance of the device. Additionally, monolithic optical immersion to GaAs substrates has been applied. The devices have been characterized by current and capacitance measurements performed at steady-state and time dependent conditions at temperatures 77-300 K. The measurements provide an indication that tunneling and defect- assisted rather than band-to-band processes limit performance of the devices. The measurements of capacitance and series resistance of devices show picosecond RC time constant even for devices with relatively large apparent area (1 mm²). This is due to the reduction of junction capacitance by two orders of magnitude in comparison with non-immersed devices of the same optical area. The unique properties make possible more widespread applications of the optically immersed InAs devices in various infrared systems.

Citation Download Citation

Janusz Kaniewski, Zbigniew Orman, Jozef Piotrowski, M. Sioma, L. Ornoch, and Mariusz Romanis "Epitaxial InAs detectors optically immersed to GaAs microlenses", Proc. SPIE 4369, Infrared Technology and Applications XXVII, (10 October 2001); https://doi.org/10.1117/12.445349

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