Optoelectronic Devices For Millimeter-Waves

Aileen M. Vaucher; Ming G. Li; Chi H. Lee; Charles D. Striffler

doi:10.1117/12.966084

28 November 1983 Optoelectronic Devices For Millimeter-Waves

Aileen M. Vaucher, Ming G. Li, Chi H. Lee, Charles D. Striffler

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966084
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

We discuss the dynamic behavior of the propagation parameters of millimeter-waves in semiconductor waveguides when they are controlled by a laser induced electron-hole plasma. Depending upon the laser source and the semiconducting material utilized, high speed millimeter-wave phase shifters, modulators, switches, and gating devices may be constructed. Gated millimeter-wave pulses of 1 ns duration have been observed in a Si waveguide. Modulated millimeter-wave signals with pulse durations of ~ 400 ps and a modulation bandwidth approaching 1 GHz are readily available using a Cr:GaAs waveguide controlled by a mode-locked Nd:YAG laser. Control of the propagation properties of a Si waveguide has also been demonstrated using a GaAs diode laser. Simultaneous measurements of phase shift and attenuation in the waveguide as a function of time have been performed and a theoretical model has been developed which is in excellent agreement with the measured data.

Citation Download Citation

Aileen M. Vaucher, Ming G. Li, Chi H. Lee, and Charles D. Striffler "Optoelectronic Devices For Millimeter-Waves", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966084

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