Strain in epitaxial laterally overgrown (ELO) structures

Zbigniew R. Zytkiewicz

doi:10.1117/12.425413

17 April 2001 Strain in epitaxial laterally overgrown (ELO) structures

Zbigniew R. Zytkiewicz

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425413
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

X-ray diffraction and synchrotron x-ray topography methods were used to analyze strain in GaAs layers grown on GaAs and Si substrates by epitaxial lateral overgrowth (ELO) from a liquid phase. We show the laterally overgrown parts of ELO stripes adhere to the SiO₂ mask which results in their downwards bending. The procedure was found which allows to control adhesion of the layers to the mask by adjusting the vertical growth rate of the layers. For the case of GaAs ELO layers grown on Si substrates the ELO stripes bend outwards from the mask due to the tensile strain in the GaAs buffer layer. Recent data published on strain in other than GaAs ELO structures are reviewed and compared with our results.

Citation Download Citation

Zbigniew R. Zytkiewicz "Strain in epitaxial laterally overgrown (ELO) structures", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425413

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