X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method

Roman Rumianowski; Roman S. Dygdala; Waclaw Bala; Jaroslaw Sylwisty

doi:10.1117/12.425429

17 April 2001 X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method

Roman Rumianowski, Roman S. Dygdala, Waclaw Bala, Jaroslaw Sylwisty

Proceedings Volume 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (2001) https://doi.org/10.1117/12.425429
Event: International Conference on Solid State Crystals 2000, 2000, Zakopane, Poland

Abstract

PbSe thin layers were grown by pulsed laser deposition. The layers were obtained on Si substrates at temperature 45K to 650K. The structure of the layers and its lattice parameters were estimated from the X-ray diffraction measurements. The strong intensity of (200)-PbSe peak indicates a self-texture preference in the c-axis direction.

Citation Download Citation

Roman Rumianowski, Roman S. Dygdala, Waclaw Bala, and Jaroslaw Sylwisty "X-ray characterization of PbSe/Si layers grown by pulsed laser ablation method", Proc. SPIE 4413, International Conference on Solid State Crystals 2000: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (17 April 2001); https://doi.org/10.1117/12.425429

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