Ion technologies in micro- and optoelectronics

V. Verbitsky

doi:10.1117/12.429757

12 June 2001 Ion technologies in micro- and optoelectronics

V. Verbitsky

Proceedings Volume 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies; (2001) https://doi.org/10.1117/12.429757
Event: International Conference on Optoelectronic Information Technologies, 2000, Vinnytsia, Ukraine

Abstract

The new approaches to problems of ion stimulation of technological processes of making of thin films for micro- and optoelectronic devices are surveyed. An example with titanium silicide exhibits the role of power and thermal factors during formation of chemical compounds of thin films. The obtained theoretical and experimental results are extended to ion stimulation of the MOC-VD process of A³B⁵ semiconductor epitaxy. An opportunity to essentially decrease a temperature of epitaxial growth for obtaining dislocationless films of A³B⁵ and their solid solutions is shown.

Citation Download Citation

V. Verbitsky "Ion technologies in micro- and optoelectronics", Proc. SPIE 4425, Selected Papers from the International Conference on Optoelectronic Information Technologies, (12 June 2001); https://doi.org/10.1117/12.429757

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available