Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation

Alexander F. Banishev; Vladimir S. Golubev; Alexei Yu. Kremnev

doi:10.1117/12.428352

30 May 2001 Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation

Alexander F. Banishev, Vladimir S. Golubev, Alexei Yu. Kremnev

Author Affiliations +

Proceedings Volume 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics; (2001) https://doi.org/10.1117/12.428352
Event: International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, 2000, Vladimir/Suzdal, Russian Federation

Abstract

The paper pursues an experimental investigation on solid- phase destruction of thin surface silicon layer (h approximately equals 10^-4 cm) in vacuum, related to accumulation of dislocations under periodic action of short pulses. It has been concluded that the destruction of sample surface will be governed by competition of processes of dislocation growth and relaxation. It has been shown that the destruction of surface is caused by the requisite number N_c of laser pulses. The plots of N_c against power density and pulse repetition period have been constructed.

Citation Download Citation

Alexander F. Banishev, Vladimir S. Golubev, and Alexei Yu. Kremnev "Investigation of regimes of structural defect accumulation and relaxation on silicon surface under periodic-pulse laser radiation", Proc. SPIE 4429, International Seminar on Novel Trends in Nonlinear Laser Spectroscopy and High-Precision Measurements in Optics, (30 May 2001); https://doi.org/10.1117/12.428352

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