Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Terence J. de Lyon; Rajesh D. Rajavel; John A. Roth; John E. Jensen; Greg L. Olson; Peter D. Brewer; Andrew T. Hunter; Tod S. Williamson; Steven L. Bailey; James W. Bangs; Aimee Buell; George Chapman; Alex C. Childs; Eli Gordon; Michael D. Jack; Scott M. Johnson; Kim Kosai; Kevin D. Maranowski; Elizabeth A. Patten; Jeff Peterson; Le T. Pham; William A. Radford; Valerie Randall; John B. Varesi; Jerry A. Wilson

doi:10.1117/12.448189

12 November 2001 Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy

Terence J. de Lyon, Rajesh D. Rajavel, John A. Roth, John E. Jensen, Greg L. Olson, Peter D. Brewer, Andrew T. Hunter, Tod S. Williamson, Steven L. Bailey, James W. Bangs, Aimee Buell, George Chapman, Alex C. Childs, Eli Gordon, Michael D. Jack, Scott M. Johnson, Kim Kosai, Kevin D. Maranowski, Elizabeth A. Patten, Jeff Peterson, Le T. Pham, William A. Radford, Valerie Randall, John B. Varesi, Jerry A. Wilson

Author Affiliations +

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448189
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in the 3-5 mm and 8-12 mm spectral ranges of importance for thermal imaging systems. Over the course of the past decade, significant advances have been made in the development of thin-film epitaxial growth techniques, such as molecular-beam epitaxy (MBE), which have enabled the synthesis of IR detector device structures with complex doping and composition profiles. The central role played by in situ sensors for monitoring and control of the MBE growth process are reviewed. The development of MBE HgCdTe growth technology is discussed in three particular device applications: avalanche photodiodes for 1.55 +m photodetection, megapixel FPAs on Si substrates, and multispectral IR detectors.

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Terence J. de Lyon, Rajesh D. Rajavel, John A. Roth, John E. Jensen, Greg L. Olson, Peter D. Brewer, Andrew T. Hunter, Tod S. Williamson, Steven L. Bailey, James W. Bangs, Aimee Buell, George Chapman, Alex C. Childs, Eli Gordon, Michael D. Jack, Scott M. Johnson, Kim Kosai, Kevin D. Maranowski, Elizabeth A. Patten, Jeff Peterson, Le T. Pham, William A. Radford, Valerie Randall, John B. Varesi, and Jerry A. Wilson "Advances in HgCdTe-based infrared detector materials: the role of molecular-beam epitaxy", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448189

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