Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays

Fiodor F. Sizov; Joanna V. Gumenjuk-Sichevskaya; Yuri G. Sidorov; Vladimir Vasilev; Alexandr G. Golenkov; Vyacheslav V. Zabudsky; Vladimir P. Reva; Yurii P. Derkach; Vladimir V. Tetyorkin

doi:10.1117/12.448168

12 November 2001 Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays

Fiodor F. Sizov, Joanna V. Gumenjuk-Sichevskaya, Yuri G. Sidorov, Vladimir Vasilev, Alexandr G. Golenkov, Vyacheslav V. Zabudsky, Vladimir P. Reva, Yurii P. Derkach, Vladimir V. Tetyorkin

Author Affiliations +

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448168
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

Dark carrier transport mechanisms in narrow-gap Hg_1-xCd_xTe multilayer structures and Pb_1-zSn_zTe/PbTe_1-yS(Se)_y heterojunctions at T~80 K for applications in IR arrays are analyzed and compared with homojunction mercury-cadmium telluride (MCT) photodiode characteristics in the temperature range T~70-150 K. In the analysis procedure two major current mechanisms were included into the current balance equations: trap-assisted tunneling (TAT) and Shockley-Reed-Hall (SRH) generation-recombination processes for a defect trap level. Other current mechanisms (e.g., band-to-band tunneling, bulk diffusion) were taken into account as additive contributions. For TAT the tunneling rate characteristics were calculated within the k-p-approximation. Using donor and acceptor concentrations, trap level energies and concentrations, and in-junction trap level lifetimes as fitting parameters, good agreement with experimental data for HgCdTe and PbSnTe heterojunction and homojunction diodes was obtained, which allows one to predict the diode parameters from the known material characteristics. Photodiode or array parameters itself, or with CCD readouts, or CCD readouts separately were tested to study the influence of readout cascade on the diodes' properties.

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Fiodor F. Sizov, Joanna V. Gumenjuk-Sichevskaya, Yuri G. Sidorov, Vladimir Vasilev, Alexandr G. Golenkov, Vyacheslav V. Zabudsky, Vladimir P. Reva, Yurii P. Derkach, and Vladimir V. Tetyorkin "Dark current transport mechanisms in narrow-gap heterojunctions for IR arrays", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448168

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