Binary mask defect printability for 130-nm ArF lithography

Shu-Chun Lin; Jian-Hong Chen; Tyng-Hao Hsu; C. C. Hung; Chin-Hsiang Lin

doi:10.1117/12.458363

11 March 2002 Binary mask defect printability for 130-nm ArF lithography

Shu-Chun Lin, Jian-Hong Chen, Tyng-Hao Hsu, C. C. Hung, Chin-Hsiang Lin

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458363
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

Recent observations indicate that wafer CD control for the 0.13-micrometers node is sensitive to non-phase defects between 0.1 micrometers and 0.25 micrometers on a 4X reticle, as a function of the location of the sub-killer defect. Since more and more small defects can be detected by today's advanced mask defect inspection tools, it is important to determine whether these detected defects can impact wafer lithography process window. The experimental result is based on a typical 0.13-micrometers process using a pre-designed Defects Sensitivity Monitor reticle to address the printability of these programmed defects.

Citation Download Citation

Shu-Chun Lin, Jian-Hong Chen, Tyng-Hao Hsu, C. C. Hung, and Chin-Hsiang Lin "Binary mask defect printability for 130-nm ArF lithography", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458363

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