Model-based OPC methodology for 0.13 micron technology

Vishnu G. Kamat; Kent G. Green; Sejal N. Chheda; Sven Muehle; Venkat Kolagunta; Bill Wilkinson; Cecilia E. Philbin

doi:10.1117/12.458355

11 March 2002 Model-based OPC methodology for 0.13 micron technology

Vishnu G. Kamat, Kent G. Green, Sejal N. Chheda, Sven Muehle, Venkat Kolagunta, Bill Wilkinson, Cecilia E. Philbin

Proceedings Volume 4562, 21st Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.458355
Event: Photomask 2001, 2001, Monterey, CA, United States

Abstract

As we move towards smaller dimensions and denser circuits, Model Based OPC has become a critical and indispensable tool to achieve feature fidelity for random logic and very small bitcell patterns. Model-Based OPC s used to overcome the effects due to the reticle manufacturing process and the photolithography process which are essentially low pass filters, with the objective of returning the intended drawn feature on wafer within acceptable error. In this paper we demonstrate its capabilities and flexibility with the development of a mixed Model-based/Rule based OPC approach that covers all categories of features for the active layer and the heuristics that justify this approach. We discuss along with experimental results the parameterized variations that are possible with Model Based OPC (MBOPC)and the optimization required as a result within the paradigm of a 248nm-lithography process for the 0.13-micron technology. Data and manufacturability issues are discussed that are an important consideration for a feasible MBOPC solution.

Citation Download Citation

Vishnu G. Kamat, Kent G. Green, Sejal N. Chheda, Sven Muehle, Venkat Kolagunta, Bill Wilkinson, and Cecilia E. Philbin "Model-based OPC methodology for 0.13 micron technology", Proc. SPIE 4562, 21st Annual BACUS Symposium on Photomask Technology, (11 March 2002); https://doi.org/10.1117/12.458355

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