1National Institute of Advanced Industrial Science and Saga Univ. (Japan) 2National Institute of Advanced Industrial Science and Technology, Kyushu (Japan) 3Saga Univ. (Japan)
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We have investigated the effect of ZnO films used as buffer layers on the triboluminescence (TrL) intensity of ZnS:Mn thin films on quartz substrates using RF magnetron sputtering method and annealing technique. Highly oriented film of ZnO was firstly deposited on quartz glass substrate and then the ZnS:Mn film was successfully deposited on the ZnO film with orientation. By annealing at 5% H2 in Ar ambient, the crystallinity of both ZnO and ZnS:Mn films was increased. It was found that the addition of the ZnO buffer layer greatly improve the TrL intensity of the ZnS:Mn films.
Boateng Onwoma-Agyemann,Chao-Nan Xu,S.W. Shi,Xu-Guang Zheng, andMorio Suzuki
"Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers", Proc. SPIE 4576, Advanced Environmental Sensing Technology II, (22 February 2002); https://doi.org/10.1117/12.456955
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Boateng Onwoma-Agyemann, Chao-Nan Xu, S.W. Shi, Xu-Guang Zheng, Morio Suzuki, "Enhancement in ZnS:Mn triboluminescent film intensity using ZnO films as buffer layers," Proc. SPIE 4576, Advanced Environmental Sensing Technology II, (22 February 2002); https://doi.org/10.1117/12.456955