Paper
14 June 1984 Nascent Product Time-Of-Flight Distributions From Laser Initiated Etching Of Germanium By Bromine
Glenn P Davis, Cameron A Moore, Richard A. Gottscho
Author Affiliations +
Proceedings Volume 0459, Laser-Assisted Deposition, Etching, and Doping; (1984) https://doi.org/10.1117/12.939445
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States
Abstract
The dynamics of laser stimulated etching of Ge by Br2 have been studied by characterization of the desorbed products. The product time-of-flight distribution was measured with a quadrupole mass spectrometer, providing both product identification and velocity analysis. Transient reflectivity measurements were used to determine when the melt threshold for Ge was exceeded. At low Br2 pressure, etching at a rate of - 0.1 - 0.2Å per pulse was observed above the melt threshold. The principal product observed was GeBr2, whose translational energy distribution deviated slightly from Maxwell-Boltzmann: the observed distribution was relatively rich in high energy species (i.e. hyperthermal).
© (1984) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn P Davis, Cameron A Moore, and Richard A. Gottscho "Nascent Product Time-Of-Flight Distributions From Laser Initiated Etching Of Germanium By Bromine", Proc. SPIE 0459, Laser-Assisted Deposition, Etching, and Doping, (14 June 1984); https://doi.org/10.1117/12.939445
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Cited by 2 scholarly publications.
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KEYWORDS
Etching

Germanium

Bromine

Ions

Reflectivity

Doping

Dye lasers

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