Paper
29 October 2001 Fabrication and optical properties of sol-gel-derived interference coating for high power laser applications
Qinyuan Zhang, Kantisara Pita, Chang-Qing Xu, Wenxiu Que, S. Hinooda, Periyasamy Thilakan
Author Affiliations +
Proceedings Volume 4594, Design, Fabrication, and Characterization of Photonic Devices II; (2001) https://doi.org/10.1117/12.446543
Event: International Symposium on Photonics and Applications, 2001, Singapore, Singapore
Abstract
A single layer sol-gel derived TiO2 thin films and 6 periods SiO2/TiO2 multilayer coating were designed and prepared on GaAs substrates as anti-reflection coating or near-IR-reflective coating for high power semiconductor laser applications. Crack free TiO2 thin films having thickness of 80-150 nm, and refractive indices of 1.8-2.1 have been obtained by simply sol-gel method upon heating at different temperatures. The obtained TiO2 thin films on GaAs substrates have shown reflectance of <EQ 1 percent in the wavelength of about 808 nm. Thin films of TiO2 and SiO2 were also used to fabricate near IR reflector ion GaAs substrates. The reflector consisted of 6 SiO2/TiO2 bi-layers, designed with a high-reflective band in the wavelength of 1064 nm. A minimum transmittance of <EQ 2 percent in the wavelength range between 950 and 1100 nm has been obtained in the present multilayer SiO2/TiO2 coating.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qinyuan Zhang, Kantisara Pita, Chang-Qing Xu, Wenxiu Que, S. Hinooda, and Periyasamy Thilakan "Fabrication and optical properties of sol-gel-derived interference coating for high power laser applications", Proc. SPIE 4594, Design, Fabrication, and Characterization of Photonic Devices II, (29 October 2001); https://doi.org/10.1117/12.446543
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KEYWORDS
Coating

Thin films

Reflectivity

Gallium arsenide

Sol-gels

Multilayers

Refractive index

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