Paper
15 October 2001 Preparation of the SnO2 gate pH-ISFET by sol gel technology
Jung Chuan Chou, Yii Fang Wang
Author Affiliations +
Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444656
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
In this paper, the sol-gel prepared SnO2 thin film is first applied for the pH sensing. We use the SnCl2(DOT)2H2O as the precursor. It is cheaper than other methods. The resulting solution is dropped on the gate of the SiO2 gate pH-ISFET (ion sensitive field effect transistor). After baking, the thin film will convert to SnO2. We also use the thermal evaporation system to prepare the SnO2 gate MOSFET. Then, we use the Keithley 236 instrument to measure the IDS-VG curves of the SnO2 gate MOSFET and pH-ISFET for the different pH buffer solutions. Since the MOSFET and pH-ISFET are fabricated on the same silicon wafer, the properties of these devices are identical. Therefore, we can use the experimental results and theoretical model of the pH-ISFET to find the pH sensitivity and pHPZC (pH at the point of zero charge) of the sol-gel prepared SnO2 gate pH-ISFET, which are about 57.36 mV/pH and 11.3, respectively.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jung Chuan Chou and Yii Fang Wang "Preparation of the SnO2 gate pH-ISFET by sol gel technology", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444656
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