Sensitivity of the a-C:H gate pH-ISFET

Jung Chuan Chou; Hsjian-Ming Tsai

doi:10.1117/12.444655

15 October 2001 Sensitivity of the a-C:H gate pH-ISFET

Jung Chuan Chou, Hsjian-Ming Tsai

Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444655
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

The hydrogenated amorphous carbon (a-C:H) contains significant fractions of sp³ type C bondings, giving them attractive physical and mechanical properties, some similar to a certain extent to the diamond. Otherwise, the dielectric constant of the a-C:H films covers the range of 2.5 - 6, and the a-C:H also can be used for the protective and isolated layer. In this paper, we study the sensitivity of the a-C:H applied to the pH-ISFET (ion sensitive field effect transistor). The a- C:H gate pH-ISFET devices were prepared by the plasma-enhanced low pressure chemical vapor deposition (PE-LPCVD). The sensitivity is determined by the I_DS - V_GS and C-V curves shift in the various pH buffer solutions. We can also measure the pH at zero charge point (pH_pzc) for the a-C:H gate pH-ISFET.

Citation Download Citation

Jung Chuan Chou and Hsjian-Ming Tsai "Sensitivity of the a-C:H gate pH-ISFET", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444655

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