Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current

Suk-Kyun Lee; Yong-Cheol Choi; S. H. Lee; T. H. Kwon; Cheol-Joong Kim; Hyunsoon Kang; Changsub Song

doi:10.1117/12.444681

15 October 2001 Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current

Suk-Kyun Lee, Yong-Cheol Choi, S. H. Lee, T. H. Kwon, Cheol-Joong Kim, Hyunsoon Kang, Changsub Song

Proceedings Volume 4600, Advances in Microelectronic Device Technology; (2001) https://doi.org/10.1117/12.444681
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China

Abstract

A 20V submicron BCDMOS process is presented with extended LDMOS SOA (Safe-Operating-Area) for smart power applications by optimizing body-current. The LDMOS has two peaks of body current and the origin of two peaks can be explained through hot carrier injection phenomenon. The first peak shows the appearance of weakly impact ionization related to the device degradation and the second peak shows the occurrence of snap-back phenomenon predicting device destruction, respectively. In the present paper, we investigated the HE-SOA (Hot-Electron-Limited SOA) and Electrical SOA using two peaks of body current in LDMOS transistors with submicron BCD process.

Citation Download Citation

Suk-Kyun Lee, Yong-Cheol Choi, S. H. Lee, T. H. Kwon, Cheol-Joong Kim, Hyunsoon Kang, and Changsub Song "Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current", Proc. SPIE 4600, Advances in Microelectronic Device Technology, (15 October 2001); https://doi.org/10.1117/12.444681

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