Paper
15 October 2001 Angular-dependent magnetoresistance characteristics in Si(001)/NiO(300 Å)/NiFe(t) bilayer system
Author Affiliations +
Proceedings Volume 4601, Micromachining and Microfabrication Process Technology and Devices; (2001) https://doi.org/10.1117/12.444737
Event: International Symposium on Optoelectonics and Microelectronics, 2001, Nanjing, China
Abstract
Angular-dependent magnetoresistance characteristics in Si(001)/NiO(300A)/NiFe(tequals450, 1000, 1350A) thin films was investigated in terms of an angle between current and applied magnetic field. The samples were grown by RF-sputtering and DC-sputtering methods on naturally oxidised Si(001) substrates. First, NiO layer(300A) was grown on Si substrate, followed by the deposition of NiFe layers as a function of NiFe thickness under the condition of in-situ magnetic bias-field of approximately 500G. The measurement of angular magnetoresistance in Si(001)/NiO(300A)NiFe(tequals450, 1000, 1350A) thin films were carried out in variation of an angle between current direction and external magnetic field. Also, on the base of single magnetic domain model, the comparison between the measured and the calculated MR profiles was made. For tNiFe equals 450A, symmetrical MR characteristics were observed as sweeping external magnetic field proceed. However, for tNiFe equals 1000A, asymmetric MR profiles were shown.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Won Jae Lee, Jae Sung Song, Bok Ki Min, and Gwiy-Sang Chung "Angular-dependent magnetoresistance characteristics in Si(001)/NiO(300 Å)/NiFe(t) bilayer system", Proc. SPIE 4601, Micromachining and Microfabrication Process Technology and Devices, (15 October 2001); https://doi.org/10.1117/12.444737
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
Back to Top