An essential issue of almost all sensors using piezoresistive effect of silicon is the sensing of the stress induced by external cause such as pressure for pressure sensor, inertial force for inertial sensor, etc. Traditional piezoresistor array need relatively large area, exhibits low sensitivity, and need complex circuit for (delta) R/R to current or voltage measurement transaction. Using Stress-Sensitive Differential Amplifier, or SSDA, is an effective solution to the above-mentioned problems. SSDA exhibits relatively high sensitivity and low power dissipation. But, although it's temperature coefficient is lower compared to piezoresistor stress - sensing element, temperature compensation is still imperative. In this paper, the principles of SSDA are presented. A new SSDA circuit is designed. Using such circuit the sensitivity can be greatly increased, and such an increase need no any extra cost in circuit area, power dissipation, circuit complexity, etc. A new technic for the SSDA's gain control is developed, which makes the setting of the sensors' dynamic range simple; A temperature compensation circuit is also designed and integrated with the SSDA.
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