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The ZnS0.06Se0.94 epilayer is obtained by metallorganic chemical vapor deposition (MOCVD) with Se on-off modulation. The activation energy of as grown ZnSxSe1- x layer is lower than that by conventional growth method. From the 77 K photoluminescence spectra, high quality of as grown layer is obtained as the composition of ZnSxSe1- x reaches x equals 0.06 with which the lattice of ZnS0.06Se0.94 matches that of GaAs substrate. The 77K near band edge emission peak of as grown ZnS0.06Se0.94 is observed at 441.5 nm and the full width at half maximum of 12.7 meV is obtained.
Min Yen Yeh,Hung Ming Yen,Wen Ruey Tsai,Chung Chen Hsieh,Yao Song Lee,Shan Cheng Pan, andWuu Wen Lin
"Flow-rate modulation epitaxy of ZnSxSe1-x on GaAs", Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445706
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Min Yen Yeh, Hung Ming Yen, Wen Ruey Tsai, Chung Chen Hsieh, Yao Song Lee, Shan Cheng Pan, Wuu Wen Lin, "Flow-rate modulation epitaxy of ZnSxSe1-x on GaAs," Proc. SPIE 4602, Semiconductor Optoelectronic Device Manufacturing and Applications, (16 October 2001); https://doi.org/10.1117/12.445706