Secondary Ion Mass Spectrometry Of Semiconductors

R. G. Wilson

doi:10.1117/12.941352

31 May 1984 Secondary Ion Mass Spectrometry Of Semiconductors

R. G. Wilson

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941352
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Features and analysis modes of secondary ion mass spectrometry (SIMS) as applied to elemental and compound semiconductors are reviewed. Semiconductor materials are described. The SIMS technique and what it can do are analyzed by examining separately the ion beam, sputtering, the surface, mass analysis, and the secondary ions. Secondary ion enhancement, sputtering rates, impurity - matrix interactions, machine parameters, signal detection modes and dynamic range, depth profile scale calibration, detection sensitivity and depth profile aberrations are discussed. The applications of bulk analysis, imaging, mass scanning, and depth profiling are described. Special capabilities like high mass resolution are pointed out.

Citation Download Citation

R. G. Wilson "Secondary Ion Mass Spectrometry Of Semiconductors", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941352

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