Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd[sub]2[/sub]Ge Formation

D. M. Scott; C S Pai; S S. Lau

doi:10.1117/12.941345

31 May 1984 Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd₂Ge Formation

D. M. Scott, C S Pai, S S. Lau

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941345
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

Evaporated W ≈ N 3A thick has been used as a diffusion marker during the growth of Pd₂Ge. Pd films ≈ 1200Å thick were vacuum deposited onto Ge < 100 > substrates and annealed in vacuum at temperatures between 230 to 260'C for various times to form the Pd2Ge layer. MeV ⁴He backscattering spectrometry has been used to determine the marker displacement and Pd₂Ge thickness. We find that Pd is the dominant diffusing species, making up about 2/3 of the total atomic transport. We have also measured the Pd₂Ge growth kinetics in this temperature range. We find growth to be proportional to square root of time, i.e. diffusion limited, with an activation energy of 1.08 0.05eV . Thus we find the reaction of Pd with Ge to form Pd₂Ge is very similar to the reaction of Pd with Si to form Pd₂Si.

Citation Download Citation

D. M. Scott, C S Pai, and S S. Lau "Thin Film Reaction Investigation By Backscattering Spectroscopy - W Marker Study Of Pd₂Ge Formation", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941345

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