Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers

Gennady A. Smolyakov; Petr Georgievich Eliseev; Marek Osinski

doi:10.1117/12.470562

12 June 2002 Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers

Gennady A. Smolyakov, Petr Georgievich Eliseev, Marek Osinski

Proceedings Volume 4646, Physics and Simulation of Optoelectronic Devices X; (2002) https://doi.org/10.1117/12.470562
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The phenomenon of resonant mode coupling is modeled and numerically investigated in InGaN-based multiple-quantum- well laser structures. It is shown that under resonant conditions the internal mode coupling can lead to severe distortions of both near- and far-field characteristics. Taking into account the carrier-induced change of the modal effective index for the lasing mode, we show that the resonant internal mode coupling can result in a strongly nonlinear dependence of the modal gain on injection current, with possible region of negative differential modal gain.

Citation Download Citation

Gennady A. Smolyakov, Petr Georgievich Eliseev, and Marek Osinski "Effects of resonant mode coupling on near- and far-field characteristics of InGaN-based lasers", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470562

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