Paper
12 June 2002 Operator ordering of a position-dependent effective-mass Hamiltonian in lattice-matched semiconductor superlattices and quantum wells
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Abstract
The position-dependent effective mass Hamiltonian H=- (h/2)[m(z)](alpha )(Delta) [m(z)](beta )(Delta) [m(z)](alpha )+V(z) with 2(alpha) + (beta) =-1 is applied to the problem of periodic heterostructure with abrupt interfaces and discontinuous mass distribution. In order to determine the most suitable operator ordering, numerical results for interband and intersubband transition energies are compared with experimental data for various GaAs/AlxGa1-xAs superlattices and quantum wells. The ordering- related energy shift as a function of structural parameters (well thickness, barrier thickness and height) is investigated. We find that variation of kinetic energy operator ordering can cause transition energy shift exceeding 40 meV. The model with (alpha) = 0 and (beta) = -1 consistently produces the best fit to experimental results.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Smagley, M. Mojahedi, and Marek Osinski "Operator ordering of a position-dependent effective-mass Hamiltonian in lattice-matched semiconductor superlattices and quantum wells", Proc. SPIE 4646, Physics and Simulation of Optoelectronic Devices X, (12 June 2002); https://doi.org/10.1117/12.470524
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Cited by 2 scholarly publications.
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KEYWORDS
Superlattices

Quantum wells

Interfaces

Aluminum

Heterojunctions

Semiconductors

Solids

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