InAs/InGaSb Type-II strained layer superlattice IR detectors

Vaidya Nathan; K. Alex Anselm; C.H. Thompson Lin; Jeffrey L. Johnson

doi:10.1117/12.467663

21 May 2002 InAs/InGaSb Type-II strained layer superlattice IR detectors

Vaidya Nathan, K. Alex Anselm, C.H. Thompson Lin, Jeffrey L. Johnson

Proceedings Volume 4650, Photodetector Materials and Devices VII; (2002) https://doi.org/10.1117/12.467663
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

InAs/InGaSb type2 strained layer superlattice (SLS) combines the advantages of III-V materials technology with the strong, broad-band absorption, and wavelength tunability of HgCdTe. In fact, the significantly reduced tunneling and Auger recombination rates in SLS compared to those in HgCdTe should enable SLS detectors to outperform HgCdTe. We report the results of our investigation of InAs/InGaSb type2 strained layer superlattices (SLS)for LWIR photovoltaic detector development. We modeled the band structure, and absorption spectrum of SLS's, and achieved good agreement with experimental data. We systematically investigated the SLS growth conditions, resulting in good uniformity, and the elimination of several defects. We designed, developed and evaluated 16x16 array of 13 micron cutoff photovoltaic detectors. Photodiodes with cutoff wavelengths of 13 and 18microns were demonstrated, which are the longest wavelengths demonstrated for this material system. Quantum efficiencies commensurate with the superlattice thickness were demonstrated and verified at AFRL. The electrical properties show excessive leakage current, most likely due to trap-assisted tunneling.

Citation Download Citation

Vaidya Nathan, K. Alex Anselm, C.H. Thompson Lin, and Jeffrey L. Johnson "InAs/InGaSb Type-II strained layer superlattice IR detectors", Proc. SPIE 4650, Photodetector Materials and Devices VII, (21 May 2002); https://doi.org/10.1117/12.467663

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