Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers

Georgy G. Zegrya; Natalya A. Gunko; Eugen B. Dogonkin

doi:10.1117/12.467955

22 May 2002 Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers

Georgy G. Zegrya, Natalya A. Gunko, Eugen B. Dogonkin

Author Affiliations +

Proceedings Volume 4651, Novel In-Plane Semiconductor Lasers; (2002) https://doi.org/10.1117/12.467955
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The effect of carrier-carrier relaxation and carrier - phonon relaxation on threshold characteristics of quantum well (QW) lasers is studied. Carrier relaxation time considerably depends on temperature, carrier density, and quantum well width. It is shown that in this case the gain coefficient becomes a more pronounced function of temperature and carrier density.

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Georgy G. Zegrya, Natalya A. Gunko, and Eugen B. Dogonkin "Influence of intraband relaxation processes on threshold and power-current characteristics of semiconductor lasers", Proc. SPIE 4651, Novel In-Plane Semiconductor Lasers, (22 May 2002); https://doi.org/10.1117/12.467955

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