Impurity-free vacancy disordering of InGaAs quantum dots

Penelope Lever; Hark Hoe Tan; Michael Gal; Chennupati Jagadish

doi:10.1117/12.460800

28 March 2002 Impurity-free vacancy disordering of InGaAs quantum dots

Penelope Lever, Hark Hoe Tan, Michael Gal, Chennupati Jagadish

Proceedings Volume 4656, Quantum Dot Devices and Computing; (2002) https://doi.org/10.1117/12.460800
Event: Symposium on Integrated Optoelectronic Devices, 2002, San Jose, California, United States

Abstract

The effect of interdiffusion on the luminescence of InGaAs quantum dots grown by metal organic chemical vapor deposition with various In compositions was studied. The samples were subjected to thermal annealing with and without spin-on-glass. Up to 250 meV blueshifts and narrowing of the linewidths by up to 60 meV were observed in samples that were annealed without the dielectric cap. The effects of diffusion were seen at lower annealing temperatures for the samples with higher In content. The spin-on-glass created additional blueshift above that of simple thermal annealing. However, Ga-doped spin-on-glass suppressed significantly any additional intermixing other than that of simple thermal annealing. Strain is also a factor in the blueshift and narrowing of the photoluminescence. These results suggest that a range of bandgap energies could be achieved by selective area interdiffusion of the quantum dot samples.

Citation Download Citation

Penelope Lever, Hark Hoe Tan, Michael Gal, and Chennupati Jagadish "Impurity-free vacancy disordering of InGaAs quantum dots", Proc. SPIE 4656, Quantum Dot Devices and Computing, (28 March 2002); https://doi.org/10.1117/12.460800

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