Effect of laser-induced antidiffusion on phonon-assisted electron transitions in semiconductor Fokker-Planck equation

T. Apostolova; D Huang; Paul M. Alsing; John K. McIver; David A. Cardimona

doi:10.1117/12.461694

9 April 2002 Effect of laser-induced antidiffusion on phonon-assisted electron transitions in semiconductor Fokker-Planck equation

T. Apostolova, D Huang, Paul M. Alsing, John K. McIver, David A. Cardimona

Author Affiliations +

Proceedings Volume 4679, Laser-Induced Damage in Optical Materials: 2001; (2002) https://doi.org/10.1117/12.461694
Event: Boulder Damage, 2001, Boulder, CO, United States

Abstract

By using a first-order time-dependent perturbation theory and including the effect of energy drift from electron transport on the intraband transitions of electrons due to phonons, the kinetic Fokker-Planck equation for conduction electrons in semiconductors is systematically derived in the presence of a laser pulse. A contribution from the anti- diffusion current in the equation is found as a result of the coupling between the spontaneous-phonon emission and the energy drift of electrons due to joule heating by absorbing power from a laser. Analytical expressions for source terms of the equation are given simultaneously up to second-order in perturbation theory, including the stimulated interband optical transitions of electrons from single-photon laser- field absorption, impact ionization due to the Coulomb interaction between electrons and holes, and nonradiative recombination due to the phonon-mediated interaction. Some possible damage mechanisms in semiconductors including optical, electrical, and structural damage are explored. The energy spectra of the electron distribution function are studied and used to analyze the transient behavior of both the conduction electron density and the average kinetic energy of electrons (proportional to the electron temperature). The dynamical effects of anti-diffusion recombination, thermal diffusion and lattice temperature are all shown and explained. A new kink-like feature is observed around the edge of the conduction band in the electron distribution function due to anti-diffusion.

Citation Download Citation

T. Apostolova, D Huang, Paul M. Alsing, John K. McIver, and David A. Cardimona "Effect of laser-induced antidiffusion on phonon-assisted electron transitions in semiconductor Fokker-Planck equation", Proc. SPIE 4679, Laser-Induced Damage in Optical Materials: 2001, (9 April 2002); https://doi.org/10.1117/12.461694

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