CD-SEM calibration with TEM to reduce CD measurement error

Chang-Young Jeong; Joohyoung Lee; Ki-Yeop Park; Won Gyu Lee; Dai-Hoon Lee

doi:10.1117/12.473519

16 July 2002 CD-SEM calibration with TEM to reduce CD measurement error

Chang-Young Jeong, Joohyoung Lee, Ki-Yeop Park, Won Gyu Lee, Dai-Hoon Lee

Proceedings Volume 4689, Metrology, Inspection, and Process Control for Microlithography XVI; (2002) https://doi.org/10.1117/12.473519
Event: SPIE's 27th Annual International Symposium on Microlithography, 2002, Santa Clara, California, United States

Abstract

In this paper, we will describe why the calibration process between CD-SEM and transmission electron microscopy (TEM) was performed. TEM is considered to be a unique solution such that we could obtain CD and sidewall angle accurately. TEM has the merit of having good resolution, but the measurement is performed over small segments of device features. The CD measurement error related to line edge roughness (LER) was also investigated in order to avoid the degradation in the accuracy of TEM measurement of CD. Many efforts were performed to reduce the uncertainty in TEM measurement of CD. The amount of the uncertainty related to TEM CD measurement was approximately 5 nm. We could obtain the linear relationship between CD-SEM and TEM measurements of CD Of logic gate lines ranging form 0.12 micrometers to 0.20 micrometers . The average CD measured using TEM was 15 nm lower than the CD measured with CD-SEM at poly silicon etched profile which had the sidewall angle of 86 degrees. Such difference is unacceptable in the CD measurement. The CD measurement error could be compensated with the modification of the measurement algorithms. The reproducibility of CD measurement for various algorithms was also investigated. It was shown that TEM measurement of CD could be applicable for the calibration with CD-SEM measurement to control various processes with different sidewall angles.

Citation Download Citation

Chang-Young Jeong, Joohyoung Lee, Ki-Yeop Park, Won Gyu Lee, and Dai-Hoon Lee "CD-SEM calibration with TEM to reduce CD measurement error", Proc. SPIE 4689, Metrology, Inspection, and Process Control for Microlithography XVI, (16 July 2002); https://doi.org/10.1117/12.473519

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KEYWORDS

Critical dimension metrology

Calibration

Transmission electron microscopy

Line edge roughness

Semiconducting wafers

Process control

Semiconductors

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