Defect-induced nanometer-scale surface melting and strong optical nonlinearity of Ga below the melting point

Vladimir I. Emel'yanov

doi:10.1117/12.468976

29 May 2002 Defect-induced nanometer-scale surface melting and strong optical nonlinearity of Ga below the melting point

Vladimir I. Emel'yanov

Author Affiliations +

Proceedings Volume 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; (2002) https://doi.org/10.1117/12.468976
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus

Abstract

The theory of nanoscale surface melting induced by long range screened defect-defect interactions is developed. The thickness of quasiliquid surface layer is shown to be an exponential function of temperature detuning from the melting point in accordance with the empirical dependence. Obtained results justify the modeling of observed strong nonlinear optical response of alpha-Ga films and single crystals below the melting point in terms of laser-induced nonthermal nanoscale surface melting.

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Vladimir I. Emel'yanov "Defect-induced nanometer-scale surface melting and strong optical nonlinearity of Ga below the melting point", Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); https://doi.org/10.1117/12.468976

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