1 August 2002 Assessment of mask quality assurance method of critical layers with high MEEF
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002); doi: 10.1117/12.476980
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
Currently, the wafer design rule is being reduced, and 130-100nm Lithography process development being accelerated. The specification of the mask quality assurance for 130-100nm lithography is about in the process of being fixed. It is commonly said that a 150nm Pixel grid is small enough for 130nm generation mask inspection. But We don't yet have verification results concerning whether the spec is adequate enough or not. This time, we had an experiment that at mask incoming inspection, KLA detect as repeating defect even through the mask shop inspection. We feed back this results to mask shop, and find out the route cause. Then we establish the assurance method for current and next generation mask inspection. We realized that the current mask inspection spec for each generation might not be adequate enough.
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Hiroyuki Ishida, Michihide Tanaka, Yasuhiro Mizuma, Tetuya Kitagawa, Akihiro Ogura, "Assessment of mask quality assurance method of critical layers with high MEEF", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); doi: 10.1117/12.476980; http://dx.doi.org/10.1117/12.476980
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KEYWORDS
Photomasks

Inspection

Lithography

Cadmium sulfide

Semiconducting wafers

Defect detection

Molybdenum

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