Paper
1 August 2002 CD variations from nontrivial mask-related factors
Author Affiliations +
Abstract
Mask critical dimension (CD) control relies on advanced write tools and resist processes. However, a specified write tool and process does not necessarily guarantee high mask quality. As the mask feature size shrinks to below 500 nm, there are other mask-related factors that can also significantly affect the mask performance. This paper discusses the impact of those non-trivial factors, such as mask writing tool and process control, calibration of mask CD metrology, blank quality of attenuated phase shift mask (ATPSM), pellicle degradation due to 193 nm laser irradiation, and profile of mask features, etc.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. Mark Ma, Won D. Kim, Benjamen M. Rathsack, Guoqiang Xing, Mark H. Somervell, and Hyesook Hong "CD variations from nontrivial mask-related factors", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476928
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KEYWORDS
Photomasks

Critical dimension metrology

Pellicles

Semiconducting wafers

Reticles

Calibration

Etching

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