Paper
16 August 2002 Productivity and OPC reticle inspectability using multibeam UV wavelength inspection
Mark R. Laurance, Dino Hsieh, Vincent Wen
Author Affiliations +
Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479354
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
In order to extend the life of DUV lithography to the 130 nm design rule and below, optical proximity correction (OPC) and phase shift masks (PSM) have become increasingly common. The implementation of low k lithography in IC production requires inspection systems with smaller linewidth capability and higher sensitivity to obtain high yields in advanced reticle production. This paradigm presents greater inspection challenges for current UV tools. When inspections are run on advanced reticles on current tools, the number of false and nuisance defect detections are so high as to make inspecting these reticles unmanageable. The amount of desense required to bring false and nuisance detections down also causes real defects to be missed. The TeraStar SLF27 is the next generation reticle inspection tool from KLA-Tencor. The TeraStar addresses these problems with new algorithms that allow inspection of OPC features without desensing the detectors. Complementing this are triple-beam optics and the ability to run pattern and STARlight inspections concurrently giving a net gain in the throughput and productivity of the tool. Here we present the first results from the use of the TeraStar in a production environment.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark R. Laurance, Dino Hsieh, and Vincent Wen "Productivity and OPC reticle inspectability using multibeam UV wavelength inspection", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479354
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KEYWORDS
Inspection

Reticles

Optical proximity correction

Semiconducting wafers

Ultraviolet radiation

Lithography

Contamination

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