Use of deep reactive ion etching in the fabrication of high-efficiency high-resolution crystal x-ray analyzers

Bor-Yuan Shew; Ruey-Shing Huang; Duan-Jen Wang; Shen-Yaw Perng; Chien-Kuang Kuan; Yong Q. Cai; Paul C. Chow; Markus Schwoerer-Boehning; Wolfgang Caliebe; Chi-Chang Kao; Chien Te Chen

doi:10.1117/12.453816

21 November 2002 Use of deep reactive ion etching in the fabrication of high-efficiency high-resolution crystal x-ray analyzers

Bor-Yuan Shew, Ruey-Shing Huang, Duan-Jen Wang, Shen-Yaw Perng, Chien-Kuang Kuan, Yong Q. Cai, Paul C. Chow, Markus Schwoerer-Boehning, Wolfgang Caliebe, Chi-Chang Kao, Chien Te Chen

Author Affiliations +

Proceedings Volume 4783, Design and Microfabrication of Novel X-Ray Optics; (2002) https://doi.org/10.1117/12.453816
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Spherically bent silicon crystal x-ray analyzers have been employed in high-resolution inelastic x-ray scattering experiments to increase the counting efficiency due to the small cross-section of the inelastic scattering processes of interest. [1] In these bent analyzers, strain causes a distribution of lattice spacing, limiting the achievable energy resolution. Hence, the silicon wafers were diced using precision diamond saws into an array of ~1x1 mm2 blocks, and then acid etched to remove the saw damage, leaving blocks ~0.6x0.6 mm² glued to a spherical concave substrate. With this method, meV energy resolution has been demonstrated with a bending radius of 6.5 m. [2] We seek to optimize the dicing process using the technique of deep reactive ion etching (DRIE) to develop highly efficient crystal analyzers. Ideally, each individual block subtends an angle that matches the acceptance (Darwin width) of the silicon reflection. This requires block sizes of about 500 μm². DRIE offers the flexibility of selecting the block size, with finely controlled groove widths (i.e., minimal loss of material), and hence the possibility of controlling the energy width. We have made a prototype analyzer using DRIE with block size of 470 μm², groove widths of 30 μm, and about 500 μm deep. The wafer was then bent and glued to a glass substrate with 2-meter radius. Tests showed encouraging results, with the DRIE analyzer performing at the 100 meV level. Details of the process and further refinements will be discussed.

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Bor-Yuan Shew, Ruey-Shing Huang, Duan-Jen Wang, Shen-Yaw Perng, Chien-Kuang Kuan, Yong Q. Cai, Paul C. Chow, Markus Schwoerer-Boehning, Wolfgang Caliebe, Chi-Chang Kao, and Chien Te Chen "Use of deep reactive ion etching in the fabrication of high-efficiency high-resolution crystal x-ray analyzers", Proc. SPIE 4783, Design and Microfabrication of Novel X-Ray Optics, (21 November 2002); https://doi.org/10.1117/12.453816

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