Paper
29 August 2002 Turn-on delay of VCSEL and effect of carrier recombination
Xiao-xia Zhang, Wei Pan, Yongzhi Liu, Jianguo Chen
Author Affiliations +
Proceedings Volume 4905, Materials and Devices for Optical and Wireless Communications; (2002) https://doi.org/10.1117/12.480967
Event: Asia-Pacific Optical and Wireless Communications 2002, 2002, Shanghai, China
Abstract
It is well known that when the laser is turned on by increasing the device current from its initial value Jo to the above-threshold value J greater than Jth, stimulated recombination is delayed by td, the time during which the carrier population rises to its threshold value. On the besis ofthe rate equations for quantum well VCSEL, a closed expression describing the time evolution of the carrier density within the turn-on period of a VCSEL has been derived for the case that the Auger effect is considered with a term proportional to the cube ofthe carrier density. The theoretic results are simulated with Simulink of MATLAB software. As a result, an explicit analytical expression for the turn-on delay of the VCSEL has also been deduced. Since the turn-on delay is an important parameter of a semiconductor laser, intensified studies on this parameter have been carried out in the past years.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiao-xia Zhang, Wei Pan, Yongzhi Liu, and Jianguo Chen "Turn-on delay of VCSEL and effect of carrier recombination", Proc. SPIE 4905, Materials and Devices for Optical and Wireless Communications, (29 August 2002); https://doi.org/10.1117/12.480967
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KEYWORDS
Vertical cavity surface emitting lasers

Laser damage threshold

Semiconductor lasers

Quantum wells

Diodes

MATLAB

Optoelectronics

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