Paper
17 September 2002 Homogeneous poling of the large-diameter PPLN wafer by means of high-voltage electric pulse triggering
Yonghang Shen, Haihua Hu, Linhua Ye, Haibin Xu, Bo Wu
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Abstract
A two-step poling technique was presented for the homogenously poling of the large diameter LN wafers. Aluminum was used as the electrode material and confirmed to be suitable for the PPLN poling purpose. PPLN wafers with a homogenously poling area greater than 52 mm in diameter have been fabricated. Experimental parameters for the homogenously poling of the 3-inch LN wafer were also presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yonghang Shen, Haihua Hu, Linhua Ye, Haibin Xu, and Bo Wu "Homogeneous poling of the large-diameter PPLN wafer by means of high-voltage electric pulse triggering", Proc. SPIE 4918, Materials, Devices, and Systems for Display and Lighting, (17 September 2002); https://doi.org/10.1117/12.483052
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KEYWORDS
Semiconducting wafers

Electrodes

Aluminum

Optical parametric oscillators

Polarization

Crystals

Nonlinear crystals

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