Structural design of novel low-actuation MEMS switches for X-band application

Weibin Zheng; Qing-An Huang; Fu-Xiao Li

doi:10.1117/12.483188

10 September 2002 Structural design of novel low-actuation MEMS switches for X-band application

Weibin Zheng, Qing-An Huang, Fu-Xiao Li

Proceedings Volume 4928, MEMS/MOEMS Technologies and Applications; (2002) https://doi.org/10.1117/12.483188
Event: Photonics Asia, 2002, Shanghai, China

Abstract

Micromechanical switches have demonstrated great potential at microwave and millimeterwave frequencies due to their very low intermodulation distortion, low power consumption, and low insertion loss characteristics. Comparing to traditional semiconductor switches, however, one of the most obstacle that hindered the application of MEMS switches is their high actuation voltage. To decrease its threshold voltage, the paper presents a novel MEMS switch. The switch is composed of a movable corrugated membrane, which can be pulled down onto the GaAs substrate at 12V. It has superior high-frequency performance with insertion loss of <0.25dB, and isolation better than 20dB at X-band frequency. Its structural design is mainly presented in this paper.

Citation Download Citation

Weibin Zheng, Qing-An Huang, and Fu-Xiao Li "Structural design of novel low-actuation MEMS switches for X-band application", Proc. SPIE 4928, MEMS/MOEMS Technologies and Applications, (10 September 2002); https://doi.org/10.1117/12.483188

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