Paper
14 November 2002 Experimental demonstration of all-optical logic gates using cross-polarization modulation in a semiconductor optical amplifier
Horacio Soto, Joseph Topomonzo, Didier Erasme, George Guekos, M. Castro
Author Affiliations +
Proceedings Volume 4935, Smart Structures, Devices, and Systems; (2002) https://doi.org/10.1117/12.479815
Event: SPIE's International Symposium on Smart Materials, Nano-, and Micro- Smart Systems, 2002, Melbourne, Australia
Abstract
In this communication we present all-optical AND, NOT XOR and NOR gates with two and three input logic signals using the cross-polarization modulation (XPolM) effect in a semiconductor optical amplifier (SOA). The gates utilize only a SOA and they need neither an inversion stage nor an additional synchronized clock. The XpolM effect is discussed as well as its repercussion on the polarization-state of a probe beam crossing a SOA perturbed by the power of a control beam. Based on this discussion, we present the design criteria allowing the implementation of the all-optical logic gates with two and three input logic signals. Finally the gates are experimentally demonstrated with input logic signals modulated with a 2.5 Gb/s NRZ code with a pseudo-random data sequence of 223-1 length.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Horacio Soto, Joseph Topomonzo, Didier Erasme, George Guekos, and M. Castro "Experimental demonstration of all-optical logic gates using cross-polarization modulation in a semiconductor optical amplifier", Proc. SPIE 4935, Smart Structures, Devices, and Systems, (14 November 2002); https://doi.org/10.1117/12.479815
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KEYWORDS
Logic

Modulation

Polarization

Optical amplifiers

Polarizers

Amplifiers

Logic devices

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