High-power diode laser bars with 19 up to 48 individually addressable emitters

Markus Roehner; Norbert Boenig; Konstantin Boucke; Reinhart Poprawe

doi:10.1117/12.478368

19 June 2003 High-power diode laser bars with 19 up to 48 individually addressable emitters

Markus Roehner, Norbert Boenig, Konstantin Boucke, Reinhart Poprawe

Proceedings Volume 4973, High-Power Diode Laser Technology and Applications; (2003) https://doi.org/10.1117/12.478368
Event: High-Power Lasers and Applications, 2003, San Jose, CA, United States

Abstract

The main challenge to address single emitters in a high-power diode-laser-bar is the thermal and electrical management to avoid crosstalking. Especially p-side up assembly leads to increasing thermal influence of neighbouring emitters due to the low thermal conductivity of GaAs. Electro-magnetic fields inside and outside the laser-bar, for example caused by high frequency modulation (10 MHz) at a high current (up to 1 A), induce voltages into neighbouring electric circuits, hence the output power of neighbouring emitters can be affected.

Citation Download Citation

Markus Roehner, Norbert Boenig, Konstantin Boucke, and Reinhart Poprawe "High-power diode laser bars with 19 up to 48 individually addressable emitters", Proc. SPIE 4973, High-Power Diode Laser Technology and Applications, (19 June 2003); https://doi.org/10.1117/12.478368

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available