Fabrication of PZT-actuated cantilevers on silicon-on-insulator wafers for rf microswitches

Hong Wen Jiang; Paul B. Kirby; Qi Zhang

doi:10.1117/12.478245

15 January 2003 Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch

Hong Wen Jiang, Paul B. Kirby, Qi Zhang

Proceedings Volume 4979, Micromachining and Microfabrication Process Technology VIII; (2003) https://doi.org/10.1117/12.478245
Event: Micromachining and Microfabrication, 2003, San Jose, CA, United States

Abstract

A processing scheme for fabricating Pb(Zr_xTi_1-x)O₃ thin film actuated silicon cantilevers using silicon-on-insulator wafers is described. Such piezoelectrically actuated cantilevers are being investigated for RF microswitches. The microswitch design specification requires the Pb(Zr_xTi_1-x)O₃ thin film to be at least 1μm thick to achieve the adequate deflection at an operating voltage of 10V. A two-stage dry-wet etching process was developed to reliably pattern the 1μm Pb(Zr_xTi_1-x)O₃ film. To release the Pb(Zr_xTi_1-x)O₃ cantilevers on silicon-on-insulator wafers it is necessary to perform deep silicon etching from both sides of the wafer. The Pb(Zr_xTi_1-x)O₃ thin film was prepared by sol-gel method. The piezoelectric coefficient d₃₁ was calculated as 14pC/N.

Citation Download Citation

Hong Wen Jiang, Paul B. Kirby, and Qi Zhang "Fabrication of PZT actuated cantilevers on silicon-on-insulator wafers for a RF microswitch", Proc. SPIE 4979, Micromachining and Microfabrication Process Technology VIII, (15 January 2003); https://doi.org/10.1117/12.478245

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